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IXFH12N120P IXFV12N120P
IXFV12N120PS
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
PLUS220 (IXFV) Outline
g fs
C iss
C oss
C rss
R Gi
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate input resistance
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
5
9
5400
290
40
1.5
34
25
62
34
103
29
41
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
R thJC
0.23 ° C /W
R thCS
(TO-247, PLUS 220)
0.21
° C /W
Source-Drain Diode
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
12
48
A
A
V SD
I F = I S , V GS = 0V, Note 1
1.5
V
TO-247 (IXFH) Outline
t rr
Q RM
I RM
I F = 6A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
0.5
6
300 ns
μ C
A
?P
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PLUS220SMD (IXFV_S) Outline
e
Dim.
Millimeter
Inches
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
b 1.0 1.4
.040 .055
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXYS reserves the right to change limits, test conditions, and dimensions.
S 6.15 BSC
242 BSC
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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